Electrical evidence of atomic-size effects in the conduction filament of RRAM

J. Sune, S. Long, C. Cagli, L. Perniola, X. Lian, X. Cartoixa, R. Rurali, E. Miranda, D. Jimenez, M. Liu

Research output: Chapter in Book › Chapter › Research

Original language	English
Title of host publication	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Editors	Tang, TA, Jiang, YL
Place of Publication	Nova York (US)
Pages	485-488
Number of pages	3
Edition	1
Publication status	Published - 1 Jan 2012

Cite this

@inbook{0ab82d04baea446baacefe91f694704b,

title = "Electrical evidence of atomic-size effects in the conduction filament of RRAM",

author = "J. Sune and S. Long and C. Cagli and L. Perniola and X. Lian and X. Cartoixa and R. Rurali and E. Miranda and D. Jimenez and M. Liu",

year = "2012",

month = jan,

day = "1",

language = "English",

isbn = "978-1-4673-2474-8",

pages = "485--488",

editor = "{Tang, TA} and {Jiang, YL}",

booktitle = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)",

edition = "1",

}

TY - CHAP

T1 - Electrical evidence of atomic-size effects in the conduction filament of RRAM

AU - Sune, J.

AU - Long, S.

AU - Cagli, C.

AU - Perniola, L.

AU - Lian, X.

AU - Cartoixa, X.

AU - Rurali, R.

AU - Miranda, E.

AU - Jimenez, D.

AU - Liu, M.

PY - 2012/1/1

Y1 - 2012/1/1

M3 - Chapter

SN - 978-1-4673-2474-8

SP - 485

EP - 488

BT - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

A2 - Tang, TA, null

A2 - Jiang, YL, null

CY - Nova York (US)

ER -