Electrical characterization of the soft breakdown failure mode in MgO layers

E. Miranda, E. O'Connor, K. Cherkaoui, S. Monaghan, R. Long, D. O'Connell, P. K. Hurley, G. Hughes, P. Casey

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Abstract

The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. We also show that the SBD current-voltage (I-V) characteristics follow the power-law model I=a Vb typical of this conduction mechanism but in a wider voltage window than the one reported in the past for SiO2. The relationship between the magnitude of the current and the normalized differential conductance was analyzed. © 2009 American Institute of Physics.
Original languageEnglish
Article number012901
JournalApplied Physics Letters
Volume95
DOIs
Publication statusPublished - 20 Jul 2009

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    Miranda, E., O'Connor, E., Cherkaoui, K., Monaghan, S., Long, R., O'Connell, D., Hurley, P. K., Hughes, G., & Casey, P. (2009). Electrical characterization of the soft breakdown failure mode in MgO layers. Applied Physics Letters, 95, [012901]. https://doi.org/10.1063/1.3167827