Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conducting atomic force microscope

M. Porti, M. Nafría, X. Aymerich, A. Olbrich, B. Ebersberger

Research output: Contribution to journal › Article › Research › peer-review

Original language	English
Pages (from-to)	1-1
Journal	Virtual journal of nanoscale science & technology
Volume	5
Issue number	6
Publication status	Published - 1 Feb 2002

Cite this

@article{8b945adafd91435fbc78d81ad6dd934a,

title = "Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conducting atomic force microscope",

author = "M. Porti and M. Nafr{\'i}a and X. Aymerich and A. Olbrich and B. Ebersberger",

year = "2002",

month = feb,

day = "1",

language = "English",

volume = "5",

pages = "1--1",

number = "6",

}

TY - JOUR

T1 - Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conducting atomic force microscope

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Olbrich, A.

AU - Ebersberger, B.

PY - 2002/2/1

Y1 - 2002/2/1

M3 - Article

SN - 1553-9644

VL - 5

SP - 1

EP - 1

JO - Virtual journal of nanoscale science & technology

JF - Virtual journal of nanoscale science & technology

IS - 6

ER -