Electrical characterization of MOS structures with Si-Nanocrystals as memory devices: a nanoscale approach with AFM

M. Porti, M. Nafria, X. Aymerich, Hongquig Hu (Editor)

Research output: Chapter in Book › Chapter › Research

Original language	English
Title of host publication	Nanocrystals: Properties, Preparation and Applications
Place of Publication	Nova York (US)
Pages	251-274
Number of pages	23
Edition	1
Publication status	Published - 1 Jan 2009

Cite this

@inbook{53d3953ef00f4a79a390f76aab25a1b6,

title = "Electrical characterization of MOS structures with Si-Nanocrystals as memory devices: a nanoscale approach with AFM",

author = "M. Porti and M. Nafria and X. Aymerich and Hongquig Hu",

year = "2009",

month = jan,

day = "1",

language = "English",

isbn = "978-1-60456-964-3",

pages = "251--274",

booktitle = "Nanocrystals: Properties, Preparation and Applications",

edition = "1",

}