Electrical characterization of MOS structures fabricated on SF6+C2ClF5 reactive ion etched silicon

E. Castán, J. Vicente, J. Barbolla, E. Cabruja, LORA TAMAYO. E.

Research output: Contribution to journalArticleResearch

Original languageEnglish
Pages (from-to)1362-1366
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume80
Issue number81
Publication statusPublished - 1 Jan 1993

Cite this

Castán, E., Vicente, J., Barbolla, J., Cabruja, E., & E., LORA. TAMAYO. (1993). Electrical characterization of MOS structures fabricated on SF6+C2ClF5 reactive ion etched silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80(81), 1362-1366.