TY - JOUR
T1 - Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope
AU - Blasco, X.
AU - Porti, M.
AU - Nafría, M.
AU - Aymerich, X.
AU - Pétry, J.
AU - Vandervorst, W.
PY - 2005/9/1
Y1 - 2005/9/1
N2 - A conductive atomic force microscope (CAFM) has been used to study, at the nanometre scale, the dependence of the electrical behaviour on the post-deposition annealing temperature (TA) and the dielectric reliability of ultrathin high-dielectric-constant/SiO2 MOS gate stacks. It has been observed that for high enough TA the conduction becomes more inhomogeneous, leading to the formation of leaky spots that could be a problem for the integration of these layers in a standard CMOS microelectronic process. The CAFM has also revealed that the values of some parameters related to the dielectric reliability, such as the area of the breakdown spot (i.e. a region that has lost its insulating properties owing to electrical stress), are of the same order for SiO2 layers and high-dielectric-constant/SiO2 stacks. Moreover, different conduction regimes, which cannot be detected by standard electrical characterization techniques, have been observed. © 2005 IOP Publishing Ltd.
AB - A conductive atomic force microscope (CAFM) has been used to study, at the nanometre scale, the dependence of the electrical behaviour on the post-deposition annealing temperature (TA) and the dielectric reliability of ultrathin high-dielectric-constant/SiO2 MOS gate stacks. It has been observed that for high enough TA the conduction becomes more inhomogeneous, leading to the formation of leaky spots that could be a problem for the integration of these layers in a standard CMOS microelectronic process. The CAFM has also revealed that the values of some parameters related to the dielectric reliability, such as the area of the breakdown spot (i.e. a region that has lost its insulating properties owing to electrical stress), are of the same order for SiO2 layers and high-dielectric-constant/SiO2 stacks. Moreover, different conduction regimes, which cannot be detected by standard electrical characterization techniques, have been observed. © 2005 IOP Publishing Ltd.
U2 - https://doi.org/10.1088/0957-4484/16/9/016
DO - https://doi.org/10.1088/0957-4484/16/9/016
M3 - Article
VL - 16
SP - 1506
EP - 1511
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
ER -