Original language | English |
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Pages (from-to) | 1457-1461 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 52 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Jan 2005 |
Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides
M. Porti, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino
Research output: Contribution to journal › Article › Research
3
Citations
(Scopus)