Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides

M. Porti, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino

Research output: Contribution to journal › Article › Research

3 Citations (Scopus)

Original language	English
Pages (from-to)	1457-1461
Journal	IEEE Transactions on Nuclear Science
Volume	52
Issue number	5
DOIs	https://doi.org/10.1109/TNS.2005.855647
Publication status	Published - 1 Jan 2005

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title = "Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides",

author = "M. Porti and M. Nafr{\'i}a and X. Aymerich and A. Cester and A. Paccagnella and S. Cimino",

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AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Cester, A.

AU - Paccagnella, A.

AU - Cimino, S.

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JF - IEEE Transactions on Nuclear Science

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