Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides

M. Porti, M. Nafría, X. Aymerich, A. Cester, A. Paccagnella, S. Cimino

Research output: Contribution to journalArticleResearch

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)1457-1461
JournalIEEE Transactions on Nuclear Science
Volume52
Issue number5
DOIs
Publication statusPublished - 1 Jan 2005

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