Electrical characteristics of aligned and transversally recrystalliced SOI MOS transistors

G. Sánchez, J. Garrido, J. Martinez, J. Piqueras, LORA TAMAYO E., C. Domínguez

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Cite this

@article{1b3cf8a9cb2b4994b6adda94864a5027,

title = "Electrical characteristics of aligned and transversally recrystalliced SOI MOS transistors",

author = "G. S{\'a}nchez and J. Garrido and J. Martinez and J. Piqueras and E., {LORA TAMAYO} and C. Dom{\'i}nguez",

year = "1992",

month = jan,

day = "1",

language = "English",

volume = "35",

pages = "1447--1450",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Electrical characteristics of aligned and transversally recrystalliced SOI MOS transistors

AU - Sánchez, G.

AU - Garrido, J.

AU - Martinez, J.

AU - Piqueras, J.

AU - E., LORA TAMAYO

AU - Domínguez, C.

PY - 1992/1/1

Y1 - 1992/1/1

M3 - Article

SN - 0038-1101

VL - 35

SP - 1447

EP - 1450

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -