Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K

M. Vellvehi; X. Jordà; D. Flores; P. Godignon; J. Rebollo; J. Millán

doi:10.1016/S0026-2714(99)00031-1

Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K

M. Vellvehi, X. Jordà, D. Flores, P. Godignon, J. Rebollo, J. Millán

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

The electrical characteristics of advanced 360 V lateral insulated-gate bipolar transistor (LIGBT) structures operating at cryogenic temperatures are analyzed in this paper. Detailed performed static and dynamic measurements on ceramic packaged LIGBT structures at 77 K are provided. A reduction of the breakdown voltage, the leakage current, the turn-off time and the transient losses has been observed when decreasing the operating temperature. A reduction of 70% of the turn-off time and a 45% of switching losses can be obtained when lowering the temperature from 300 to 77 K. At high current density levels, the on-state voltage drop of the conventional LIGBT structure increases with temperature. On the contrary, on-state voltage drop of an advanced modified LIGBT structure increases when the temperature is reduced.

Original language	English
Pages (from-to)	1239-1246
Journal	Microelectronics Reliability
Volume	39
Issue number	8
DOIs	https://doi.org/10.1016/S0026-2714(99)00031-1
Publication status	Published - 1 Jan 1999

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title = "Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K",

abstract = "The electrical characteristics of advanced 360 V lateral insulated-gate bipolar transistor (LIGBT) structures operating at cryogenic temperatures are analyzed in this paper. Detailed performed static and dynamic measurements on ceramic packaged LIGBT structures at 77 K are provided. A reduction of the breakdown voltage, the leakage current, the turn-off time and the transient losses has been observed when decreasing the operating temperature. A reduction of 70% of the turn-off time and a 45% of switching losses can be obtained when lowering the temperature from 300 to 77 K. At high current density levels, the on-state voltage drop of the conventional LIGBT structure increases with temperature. On the contrary, on-state voltage drop of an advanced modified LIGBT structure increases when the temperature is reduced.",

author = "M. Vellvehi and X. Jord{\`a} and D. Flores and P. Godignon and J. Rebollo and J. Mill{\'a}n",

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T1 - Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K

AU - Vellvehi, M.

AU - Jordà, X.

AU - Flores, D.

AU - Godignon, P.

AU - Rebollo, J.

AU - Millán, J.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The electrical characteristics of advanced 360 V lateral insulated-gate bipolar transistor (LIGBT) structures operating at cryogenic temperatures are analyzed in this paper. Detailed performed static and dynamic measurements on ceramic packaged LIGBT structures at 77 K are provided. A reduction of the breakdown voltage, the leakage current, the turn-off time and the transient losses has been observed when decreasing the operating temperature. A reduction of 70% of the turn-off time and a 45% of switching losses can be obtained when lowering the temperature from 300 to 77 K. At high current density levels, the on-state voltage drop of the conventional LIGBT structure increases with temperature. On the contrary, on-state voltage drop of an advanced modified LIGBT structure increases when the temperature is reduced.

AB - The electrical characteristics of advanced 360 V lateral insulated-gate bipolar transistor (LIGBT) structures operating at cryogenic temperatures are analyzed in this paper. Detailed performed static and dynamic measurements on ceramic packaged LIGBT structures at 77 K are provided. A reduction of the breakdown voltage, the leakage current, the turn-off time and the transient losses has been observed when decreasing the operating temperature. A reduction of 70% of the turn-off time and a 45% of switching losses can be obtained when lowering the temperature from 300 to 77 K. At high current density levels, the on-state voltage drop of the conventional LIGBT structure increases with temperature. On the contrary, on-state voltage drop of an advanced modified LIGBT structure increases when the temperature is reduced.

U2 - 10.1016/S0026-2714(99)00031-1

DO - 10.1016/S0026-2714(99)00031-1

M3 - Article

SN - 0026-2714

VL - 39

SP - 1239

EP - 1246

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8

ER -

Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K

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