Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K

M. Vellvehi, X. Jordà, D. Flores, P. Godignon, J. Rebollo, J. Millán

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    Abstract

    The electrical characteristics of advanced 360 V lateral insulated-gate bipolar transistor (LIGBT) structures operating at cryogenic temperatures are analyzed in this paper. Detailed performed static and dynamic measurements on ceramic packaged LIGBT structures at 77 K are provided. A reduction of the breakdown voltage, the leakage current, the turn-off time and the transient losses has been observed when decreasing the operating temperature. A reduction of 70% of the turn-off time and a 45% of switching losses can be obtained when lowering the temperature from 300 to 77 K. At high current density levels, the on-state voltage drop of the conventional LIGBT structure increases with temperature. On the contrary, on-state voltage drop of an advanced modified LIGBT structure increases when the temperature is reduced.
    Original languageEnglish
    Pages (from-to)1239-1246
    JournalMicroelectronics Reliability
    Volume39
    Issue number8
    DOIs
    Publication statusPublished - 1 Jan 1999

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