Electric-field control of exchange bias in multiferroic epitaxial heterostructures

V. Laukhin, V. Skumryev, X. Martí, D. Hrabovsky, F. Sánchez, M. V. García-Cuenca, C. Ferrater, M. Varela, U. Lüders, J. F. Bobo, J. Fontcuberta

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276 Citations (Scopus)


The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices. © 2006 The American Physical Society.
Original languageEnglish
Article number227201
JournalPhysical Review Letters
Publication statusPublished - 4 Dec 2006


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