Efficient methodology to extract interface traps parameters for TCAD simulations

C. Couso; J. Martin-Martinez; M. Porti; M. Nafria; X. Aymerich

doi:10.1016/j.mee.2017.04.036

Efficient methodology to extract interface traps parameters for TCAD simulations

C. Couso, J. Martin-Martinez, M. Porti, M. Nafria, X. Aymerich

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

3 Citations (Scopus)

Abstract

© 2017 Elsevier B.V. In this work, a methodology to estimate ATLAS TCAD simulation parameters from experimental data is presented, with the aim of analyzing the impact of interface traps in the MOSFET threshold voltage variability of a particular technology. The method allows to calculate the parameters that define the trap behavior in TCAD simulations (trapped charge, trap energy level and capture cross section) from the parameters that can be experimentally measured (capture and emission times and single-trap threshold voltage shift). The availability of these simulation parameters will allow to study RTN and/or BTI-related variability through TCAD simulations, in reasonable computing times.

Original language	English
Pages (from-to)	66-70
Journal	Microelectronic Engineering
Volume	178
DOIs	https://doi.org/10.1016/j.mee.2017.04.036
Publication status	Published - 25 Jun 2017

Keywords

Bias temperature instability (BTI)
Interface traps
Random telegraph noise (RTN)
Technology computer aided design (TCAD)
Variability

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10.1016/j.mee.2017.04.036

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title = "Efficient methodology to extract interface traps parameters for TCAD simulations",

abstract = "{\textcopyright} 2017 Elsevier B.V. In this work, a methodology to estimate ATLAS TCAD simulation parameters from experimental data is presented, with the aim of analyzing the impact of interface traps in the MOSFET threshold voltage variability of a particular technology. The method allows to calculate the parameters that define the trap behavior in TCAD simulations (trapped charge, trap energy level and capture cross section) from the parameters that can be experimentally measured (capture and emission times and single-trap threshold voltage shift). The availability of these simulation parameters will allow to study RTN and/or BTI-related variability through TCAD simulations, in reasonable computing times.",

keywords = "Bias temperature instability (BTI), Interface traps, Random telegraph noise (RTN), Technology computer aided design (TCAD), Variability",

author = "C. Couso and J. Martin-Martinez and M. Porti and M. Nafria and X. Aymerich",

year = "2017",

month = jun,

day = "25",

doi = "10.1016/j.mee.2017.04.036",

language = "English",

volume = "178",

pages = "66--70",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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TY - JOUR

T1 - Efficient methodology to extract interface traps parameters for TCAD simulations

AU - Couso, C.

AU - Martin-Martinez, J.

AU - Porti, M.

AU - Nafria, M.

AU - Aymerich, X.

PY - 2017/6/25

Y1 - 2017/6/25

N2 - © 2017 Elsevier B.V. In this work, a methodology to estimate ATLAS TCAD simulation parameters from experimental data is presented, with the aim of analyzing the impact of interface traps in the MOSFET threshold voltage variability of a particular technology. The method allows to calculate the parameters that define the trap behavior in TCAD simulations (trapped charge, trap energy level and capture cross section) from the parameters that can be experimentally measured (capture and emission times and single-trap threshold voltage shift). The availability of these simulation parameters will allow to study RTN and/or BTI-related variability through TCAD simulations, in reasonable computing times.

AB - © 2017 Elsevier B.V. In this work, a methodology to estimate ATLAS TCAD simulation parameters from experimental data is presented, with the aim of analyzing the impact of interface traps in the MOSFET threshold voltage variability of a particular technology. The method allows to calculate the parameters that define the trap behavior in TCAD simulations (trapped charge, trap energy level and capture cross section) from the parameters that can be experimentally measured (capture and emission times and single-trap threshold voltage shift). The availability of these simulation parameters will allow to study RTN and/or BTI-related variability through TCAD simulations, in reasonable computing times.

KW - Bias temperature instability (BTI)

KW - Interface traps

KW - Random telegraph noise (RTN)

KW - Technology computer aided design (TCAD)

KW - Variability

U2 - 10.1016/j.mee.2017.04.036

DO - 10.1016/j.mee.2017.04.036

M3 - Article

SN - 0167-9317

VL - 178

SP - 66

EP - 70

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Efficient methodology to extract interface traps parameters for TCAD simulations

Abstract

Keywords

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