Efficient methodology to extract interface traps parameters for TCAD simulations

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Abstract

© 2017 Elsevier B.V. In this work, a methodology to estimate ATLAS TCAD simulation parameters from experimental data is presented, with the aim of analyzing the impact of interface traps in the MOSFET threshold voltage variability of a particular technology. The method allows to calculate the parameters that define the trap behavior in TCAD simulations (trapped charge, trap energy level and capture cross section) from the parameters that can be experimentally measured (capture and emission times and single-trap threshold voltage shift). The availability of these simulation parameters will allow to study RTN and/or BTI-related variability through TCAD simulations, in reasonable computing times.
Original languageEnglish
Pages (from-to)66-70
JournalMicroelectronic Engineering
Volume178
DOIs
Publication statusPublished - 25 Jun 2017

Keywords

  • Bias temperature instability (BTI)
  • Interface traps
  • Random telegraph noise (RTN)
  • Technology computer aided design (TCAD)
  • Variability

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