TY - BOOK
T1 - Efficient contact resistance extraction from individual device characteristics of graphene FETs
AU - Pacheco-Sanchez, Anibal
AU - Jimenez, David
PY - 2019/10/27
Y1 - 2019/10/27
N2 - Practical contact resistance extraction methods have been applied to fabricated graphene field-effect transistors from different technologies. In contrast to other characterization techniques which require either the fabrication of additional test structures or elaborated models requiring internal quantities and a few number of fitting parameters, the methods used here enable a straightforward extraction of contact resistance values from the electrical characteristics of individual devices within the linear transistor operation using a drift-diffusion approach. Results are validated with other experimental characterization methods and with sophisticated models
AB - Practical contact resistance extraction methods have been applied to fabricated graphene field-effect transistors from different technologies. In contrast to other characterization techniques which require either the fabrication of additional test structures or elaborated models requiring internal quantities and a few number of fitting parameters, the methods used here enable a straightforward extraction of contact resistance values from the electrical characteristics of individual devices within the linear transistor operation using a drift-diffusion approach. Results are validated with other experimental characterization methods and with sophisticated models
UR - https://publons.com/publon/21254965/
U2 - 10.1109/NMDC47361.2019.9083987
DO - 10.1109/NMDC47361.2019.9083987
M3 - Proceeding
SN - 978-1-7281-2638-8
T3 - 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC)
BT - Efficient contact resistance extraction from individual device characteristics of graphene FETs
ER -