Effects of Ti incorporation on the interface properties and band alignment of HfTaO<inf>x</inf> thin films on sulfur passivated GaAs

T. Das, C. Mahata, C. K. Maiti, E. Miranda, G. Sutradhar, P. K. Bose

Research output: Contribution to journalArticleResearchpeer-review

14 Citations (Scopus)

Abstract

Thin HfTaOx and HfTaTiOx gate dielectrics (∼7-8 nm) have been rf sputter-deposited on sulfur passivated GaAs. Our experimental results suggest that the formation of Ga-O at GaAs surface and As diffusion in dielectric may be effectively controlled by Ti incorporation. Possibility of tailoring of band alignment via Ti incorporation is shown. Valence band offsets of 2.6 ± 0.05 and 2.68 ±0.05 eV and conduction-band offsets of 1.43 ±0.05 and 1.05 ±0.05 eV were found for HfTaOx (Eg∼5.45 eV) and HfTaTiOx (Eg∼5.15 eV), respectively. 7copy; 2011 American Institute of Physics.
Original languageEnglish
Article number022901
JournalApplied Physics Letters
Volume98
Issue number2
DOIs
Publication statusPublished - 10 Jan 2011

Fingerprint Dive into the research topics of 'Effects of Ti incorporation on the interface properties and band alignment of HfTaO<inf>x</inf> thin films on sulfur passivated GaAs'. Together they form a unique fingerprint.

  • Cite this