Effects of the localization of the charge in nanocrystal memory cells

Alberto Gasperin, Esteve Amat, Marc Porti, Javier Martín-Martínez, Montse Nafría, Xavier Aymerich, Alessandro Paccagnella

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)

Abstract

In this paper, we present a peculiar characteristic of nanocrystal (NC) memory (NCM) cells: The programming (P) windows measured in linear and subthreshold regions are different. A floating-gate Flash memory cell with a similar structure does not show the same behavior, and the P window (PW) is independent of the current level of the extrapolation, as expected. By performing 2-D TCAD simulations, we demonstrated that this characteristic of NCM cells is due to the localization of the charge into the NCs. We investigate the correlation between the difference of the PWs in linear and subthreshold regions and the number, width, and position of the NCs. © 2009 IEEE.
Original languageEnglish
Pages (from-to)2319-2326
JournalIEEE Transactions on Electron Devices
Volume56
DOIs
Publication statusPublished - 17 Sep 2009

Keywords

  • Charge trapping
  • Flash memories
  • Floating gate (FG)
  • Nanocrystal (NC) memories (NCMs)
  • Nonvolatile memories
  • Simulations
  • TCAD

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