Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

E. Miranda, J. Martin-Martinez, E. O'Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O'Connell, P. K. Hurley

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14 Citations (Scopus)

Abstract

The degradation dynamics and post-breakdown current-voltage (I-V) characteristics of magnesium oxide (MgO) layers grown on n and p-type indium phosphide (InP) substrates subjected to electrical stress were investigated. We show that the current-time (I-t) characteristics during degradation can be described by a power-law model I(t) = I0t-α, where I0 and α are constants. It is reported that the leakage current associated with the soft breakdown (SBD) failure mode follows the typical voltage dependence I = aVb, where a and b are constants, for both injection polarities but in a wider voltage range compared with the SiO2/Si system. It is also shown that the hard breakdown (HBD) current is remarkably high, involving large ON-OFF fluctuations that resemble the phenomenon of resistive switching previously observed in a wide variety of metal oxides. © 2009 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)1052-1055
JournalMicroelectronics Reliability
Volume49
Issue number9-11
DOIs
Publication statusPublished - 1 Sep 2009

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