The effects of spacer layer width and asymmetry on the simulation of quantum transport in resonant tunneling diodes are studied. The results show that these layers significantly influence the I-V characteristic, which presents important differences under direct or reverse bias polarity in devices with asymmetric spacer layers. These differences are interpreted in terms of potential profile comparisons of the simulated structures and are in qualitative agreement with experimental data. © 1998 American Institute of Physics.
|Journal||Journal of Applied Physics|
|Publication status||Published - 15 Jun 1998|