We have studied electron backscattering from heavily doped source/drain extensions using both the solution of Boltzmann equation and Monte Carlo simulation, for a simple case of monochromatic incident "beam" of ballistic electrons. For the case of elastic scattering, numerical results for the total reflection coefficient R may be well described by a simple expression which has a clear physical sense within the Landauer formalism of mesoscopic transport. The reduction of R due to inelastic scattering was also analyzed using Monte Carlo simulation. We believe that our work paves a way toward simple and accurate modeling of nanoscale MOSFETs with thin electrode extensions.
- Ballistic transfer
- Boltzmann equation
- Double-gate transistors
- Monte Carlo simulation
Sverdlov, V. A., Oriols, X., & Likharev, K. K. (2003). Effective boundary conditions for carriers in ultrathin SOI channels. IEEE Transactions on Nanotechnology, 2(1), 59-63. https://doi.org/10.1109/TNANO.2003.808502