Effective boundary conditions for carriers in ultrathin SOI channels

Viktor A. Sverdlov, Xavier Oriols, Konstantin K. Likharev

Research output: Contribution to journalArticleResearchpeer-review

17 Citations (Scopus)

Abstract

We have studied electron backscattering from heavily doped source/drain extensions using both the solution of Boltzmann equation and Monte Carlo simulation, for a simple case of monochromatic incident "beam" of ballistic electrons. For the case of elastic scattering, numerical results for the total reflection coefficient R may be well described by a simple expression which has a clear physical sense within the Landauer formalism of mesoscopic transport. The reduction of R due to inelastic scattering was also analyzed using Monte Carlo simulation. We believe that our work paves a way toward simple and accurate modeling of nanoscale MOSFETs with thin electrode extensions.
Original languageEnglish
Pages (from-to)59-63
JournalIEEE Transactions on Nanotechnology
Volume2
Issue number1
DOIs
Publication statusPublished - 1 Mar 2003

Keywords

  • Backscattering
  • Ballistic transfer
  • Boltzmann equation
  • Double-gate transistors
  • Monte Carlo simulation
  • MOSFET
  • Nanoelectronics

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