Effective boundary conditions for carriers in ultrathin SOI channels

Viktor A. Sverdlov; Xavier Oriols; Konstantin K. Likharev

doi:10.1109/TNANO.2003.808502

Effective boundary conditions for carriers in ultrathin SOI channels

Viktor A. Sverdlov, Xavier Oriols, Konstantin K. Likharev

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

17 Citations (Scopus)

Abstract

We have studied electron backscattering from heavily doped source/drain extensions using both the solution of Boltzmann equation and Monte Carlo simulation, for a simple case of monochromatic incident "beam" of ballistic electrons. For the case of elastic scattering, numerical results for the total reflection coefficient R may be well described by a simple expression which has a clear physical sense within the Landauer formalism of mesoscopic transport. The reduction of R due to inelastic scattering was also analyzed using Monte Carlo simulation. We believe that our work paves a way toward simple and accurate modeling of nanoscale MOSFETs with thin electrode extensions.

Original language	English
Pages (from-to)	59-63
Journal	IEEE Transactions on Nanotechnology
Volume	2
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2003.808502
Publication status	Published - 1 Mar 2003

Keywords

Backscattering
Ballistic transfer
Boltzmann equation
Double-gate transistors
Monte Carlo simulation
MOSFET
Nanoelectronics

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@article{6bb236065c5f4f5fb8e50aa12f1e2474,

title = "Effective boundary conditions for carriers in ultrathin SOI channels",

abstract = "We have studied electron backscattering from heavily doped source/drain extensions using both the solution of Boltzmann equation and Monte Carlo simulation, for a simple case of monochromatic incident {"}beam{"} of ballistic electrons. For the case of elastic scattering, numerical results for the total reflection coefficient R may be well described by a simple expression which has a clear physical sense within the Landauer formalism of mesoscopic transport. The reduction of R due to inelastic scattering was also analyzed using Monte Carlo simulation. We believe that our work paves a way toward simple and accurate modeling of nanoscale MOSFETs with thin electrode extensions.",

keywords = "Backscattering, Ballistic transfer, Boltzmann equation, Double-gate transistors, Monte Carlo simulation, MOSFET, Nanoelectronics",

author = "Sverdlov, {Viktor A.} and Xavier Oriols and Likharev, {Konstantin K.}",

year = "2003",

month = mar,

day = "1",

doi = "10.1109/TNANO.2003.808502",

language = "English",

volume = "2",

pages = "59--63",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Effective boundary conditions for carriers in ultrathin SOI channels

AU - Sverdlov, Viktor A.

AU - Oriols, Xavier

AU - Likharev, Konstantin K.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - We have studied electron backscattering from heavily doped source/drain extensions using both the solution of Boltzmann equation and Monte Carlo simulation, for a simple case of monochromatic incident "beam" of ballistic electrons. For the case of elastic scattering, numerical results for the total reflection coefficient R may be well described by a simple expression which has a clear physical sense within the Landauer formalism of mesoscopic transport. The reduction of R due to inelastic scattering was also analyzed using Monte Carlo simulation. We believe that our work paves a way toward simple and accurate modeling of nanoscale MOSFETs with thin electrode extensions.

AB - We have studied electron backscattering from heavily doped source/drain extensions using both the solution of Boltzmann equation and Monte Carlo simulation, for a simple case of monochromatic incident "beam" of ballistic electrons. For the case of elastic scattering, numerical results for the total reflection coefficient R may be well described by a simple expression which has a clear physical sense within the Landauer formalism of mesoscopic transport. The reduction of R due to inelastic scattering was also analyzed using Monte Carlo simulation. We believe that our work paves a way toward simple and accurate modeling of nanoscale MOSFETs with thin electrode extensions.

KW - Backscattering

KW - Ballistic transfer

KW - Boltzmann equation

KW - Double-gate transistors

KW - Monte Carlo simulation

KW - MOSFET

KW - Nanoelectronics

U2 - 10.1109/TNANO.2003.808502

DO - 10.1109/TNANO.2003.808502

M3 - Article

VL - 2

SP - 59

EP - 63

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 1

ER -