Abstract
We have studied electron backscattering from heavily doped source/drain extensions using both the solution of Boltzmann equation and Monte Carlo simulation, for a simple case of monochromatic incident "beam" of ballistic electrons. For the case of elastic scattering, numerical results for the total reflection coefficient R may be well described by a simple expression which has a clear physical sense within the Landauer formalism of mesoscopic transport. The reduction of R due to inelastic scattering was also analyzed using Monte Carlo simulation. We believe that our work paves a way toward simple and accurate modeling of nanoscale MOSFETs with thin electrode extensions.
Original language | English |
---|---|
Pages (from-to) | 59-63 |
Journal | IEEE Transactions on Nanotechnology |
Volume | 2 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Mar 2003 |
Keywords
- Backscattering
- Ballistic transfer
- Boltzmann equation
- Double-gate transistors
- Monte Carlo simulation
- MOSFET
- Nanoelectronics