Effective boundary conditions for carriers in ultrathin SOI channels

Viktor A. Sverdlov; Xavier Oriols; Konstantin K. Likharev

doi:10.1109/TNANO.2003.808502

Effective boundary conditions for carriers in ultrathin SOI channels

Viktor A. Sverdlov, Xavier Oriols, Konstantin K. Likharev

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

17 Citations (Scopus)

Abstract

We have studied electron backscattering from heavily doped source/drain extensions using both the solution of Boltzmann equation and Monte Carlo simulation, for a simple case of monochromatic incident "beam" of ballistic electrons. For the case of elastic scattering, numerical results for the total reflection coefficient R may be well described by a simple expression which has a clear physical sense within the Landauer formalism of mesoscopic transport. The reduction of R due to inelastic scattering was also analyzed using Monte Carlo simulation. We believe that our work paves a way toward simple and accurate modeling of nanoscale MOSFETs with thin electrode extensions.

Original language	English
Pages (from-to)	59-63
Journal	IEEE Transactions on Nanotechnology
Volume	2
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2003.808502
Publication status	Published - 1 Mar 2003

Keywords

Backscattering
Ballistic transfer
Boltzmann equation
Double-gate transistors
Monte Carlo simulation
MOSFET
Nanoelectronics

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Sverdlov, V. A., Oriols, X., & Likharev, K. K. (2003). Effective boundary conditions for carriers in ultrathin SOI channels. IEEE Transactions on Nanotechnology, 2(1), 59-63. https://doi.org/10.1109/TNANO.2003.808502

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KW - Ballistic transfer

KW - Boltzmann equation

KW - Double-gate transistors

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