Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons

Paolo Marconcini, Alessandro Cresti, Stephan Roche

    Research output: Contribution to journalArticleResearchpeer-review

    4 Citations (Scopus)

    Abstract

    © 2018 by the authors. Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the ION/IOFF ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the ION/IOFF ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.
    Original languageEnglish
    Article number667
    JournalMaterials
    Volume11
    Issue number5
    DOIs
    Publication statusPublished - 25 Apr 2018

    Keywords

    • Boron doping
    • Channel length
    • Graphene ribbon
    • I /I ratio ON OFF
    • Mobility gap
    • Transistor
    • Transport

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