Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons

Paolo Marconcini; Alessandro Cresti; Stephan Roche

doi:https://doi.org/10.3390/ma11050667

Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons

Paolo Marconcini, Alessandro Cresti, Stephan Roche

Research output: Contribution to journal › Article › Research › peer-review

7 Citations (Scopus)

Abstract

© 2018 by the authors. Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the ION/IOFF ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the ION/IOFF ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.

Original language	English
Article number	667
Journal	Materials
Volume	11
Issue number	5
DOIs	https://doi.org/10.3390/ma11050667
Publication status	Published - 25 Apr 2018

Keywords

Boron doping
Channel length
Graphene ribbon
I /I ratio ON OFF
Mobility gap
Transistor
Transport

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AU - Marconcini, Paolo

AU - Cresti, Alessandro

AU - Roche, Stephan

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Y1 - 2018/4/25

N2 - © 2018 by the authors. Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the ION/IOFF ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the ION/IOFF ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.

AB - © 2018 by the authors. Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the ION/IOFF ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the ION/IOFF ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.

KW - Boron doping

KW - Channel length

KW - Graphene ribbon

KW - I /I ratio ON OFF

KW - Mobility gap

KW - Transistor

KW - Transport

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JO - Materials

JF - Materials

SN - 1996-1944

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ER -

Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons

Abstract

Keywords

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