Abstract
© 2018 by the authors. Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the ION/IOFF ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green's function approach, we demonstrate a promising increase of the ION/IOFF ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.
Original language | English |
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Article number | 667 |
Journal | Materials |
Volume | 11 |
Issue number | 5 |
DOIs | |
Publication status | Published - 25 Apr 2018 |
Keywords
- Boron doping
- Channel length
- Graphene ribbon
- I /I ratio ON OFF
- Mobility gap
- Transistor
- Transport