Effect of oxide breakdown on RS latches

R. Fernández; R. Rodríguez; M. Nafría; X. Aymerich

doi:https://doi.org/10.1016/j.microrel.2007.01.021

Effect of oxide breakdown on RS latches

R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

7 Citations (Scopus)

Abstract

In this work, the influence of the oxide breakdown on RS latches performance has been analysed. The NAND and NOR RS latch topologies have been compared in terms of noise margin and switching times for different broken down transistors. Moreover, the influence of the additional current path due to BD and of the variation of the MOSFET parameters on the circuit functionality have been separately evaluated. The results show that RS latches do not lose functionality after BD. However, reductions on noise margin and variations on switching times are observed, which depend on the damaged transistor. The performance degradation of the circuit is mainly due to the additional post-BD gate current whereas the variation of the BD MOSFET parameters has only a small influence. © 2007 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	581-584
Journal	Microelectronics Reliability
Volume	47
DOIs	https://doi.org/10.1016/j.microrel.2007.01.021
Publication status	Published - 1 Apr 2007

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title = "Effect of oxide breakdown on RS latches",

abstract = "In this work, the influence of the oxide breakdown on RS latches performance has been analysed. The NAND and NOR RS latch topologies have been compared in terms of noise margin and switching times for different broken down transistors. Moreover, the influence of the additional current path due to BD and of the variation of the MOSFET parameters on the circuit functionality have been separately evaluated. The results show that RS latches do not lose functionality after BD. However, reductions on noise margin and variations on switching times are observed, which depend on the damaged transistor. The performance degradation of the circuit is mainly due to the additional post-BD gate current whereas the variation of the BD MOSFET parameters has only a small influence. {\textcopyright} 2007 Elsevier Ltd. All rights reserved.",

author = "R. Fern{\'a}ndez and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich",

year = "2007",

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doi = "https://doi.org/10.1016/j.microrel.2007.01.021",

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journal = "Microelectronics Reliability",

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TY - JOUR

T1 - Effect of oxide breakdown on RS latches

AU - Fernández, R.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Aymerich, X.

PY - 2007/4/1

Y1 - 2007/4/1

N2 - In this work, the influence of the oxide breakdown on RS latches performance has been analysed. The NAND and NOR RS latch topologies have been compared in terms of noise margin and switching times for different broken down transistors. Moreover, the influence of the additional current path due to BD and of the variation of the MOSFET parameters on the circuit functionality have been separately evaluated. The results show that RS latches do not lose functionality after BD. However, reductions on noise margin and variations on switching times are observed, which depend on the damaged transistor. The performance degradation of the circuit is mainly due to the additional post-BD gate current whereas the variation of the BD MOSFET parameters has only a small influence. © 2007 Elsevier Ltd. All rights reserved.

AB - In this work, the influence of the oxide breakdown on RS latches performance has been analysed. The NAND and NOR RS latch topologies have been compared in terms of noise margin and switching times for different broken down transistors. Moreover, the influence of the additional current path due to BD and of the variation of the MOSFET parameters on the circuit functionality have been separately evaluated. The results show that RS latches do not lose functionality after BD. However, reductions on noise margin and variations on switching times are observed, which depend on the damaged transistor. The performance degradation of the circuit is mainly due to the additional post-BD gate current whereas the variation of the BD MOSFET parameters has only a small influence. © 2007 Elsevier Ltd. All rights reserved.

U2 - https://doi.org/10.1016/j.microrel.2007.01.021

DO - https://doi.org/10.1016/j.microrel.2007.01.021

M3 - Article

SN - 0026-2714

VL - 47

SP - 581

EP - 584

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Effect of oxide breakdown on RS latches

Abstract

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