By means of the Ramo-Shockley-Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased. © 2012 World Scientific Publishing Company.
- gate-all-around transistor
- High-frequency noise
- Ramo-Shockley-Pellegrini theorem