Effect of gate-all-around transistor geometry on the high-frequency noise: Analytical Discussion

A. Benali, F. L. Traversa, G. Albareda, A. AlarcÓn, M. Aghoutane, X. Oriols

Research output: Contribution to journalReview articleResearchpeer-review

13 Citations (Scopus)

Abstract

By means of the Ramo-Shockley-Pellegrini theorem, an analytical discussion on how different geometries of gate-all-around 1D ballistic transistors affect their time-dependent current and their (intrinsic) high-frequency noise spectrum is presented. In particular, it is shown that the frequency range where the high-frequency noise spectrum is meaningful increases when the lateral area is decreased. © 2012 World Scientific Publishing Company.
Original languageEnglish
Article number1241002
JournalFluctuation and Noise Letters
Volume11
Issue number3
DOIs
Publication statusPublished - 1 Sep 2012

Keywords

  • gate-all-around transistor
  • High-frequency noise
  • Ramo-Shockley-Pellegrini theorem

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