The dynamic latch-up process in conventional and modified lateral insulated gate bipolar transistor (LIGBT) structures is studied in this paper. In a previous study, we have argued that the modified structure shows a superior static latch-up performance at high operating temperatures. The dynamic latch-up has also been measured under resistive load at different operating temperatures. The dependence of the dynamic latch-up current with the gate resistance has also been taken into account. A figure of merit of the dynamic latch-up current normalized to the static latch-up current level as a function of operating temperature shows the excellent electrical behaviour of the proposed modified LIGBT structure at high temperatures when compared with its conventional counterpart.
|Journal||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Publication status||Published - 1 May 2000|
Vellvehi, M., Jordà, X., Flores, D., Morvan, E., Godignon, P., Rebollo, J., & Millán, J. (2000). Dynamic latch-up in advanced LIGBT structures at high operating temperatures. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 74(1), 304-308. https://doi.org/10.1016/S0921-5107(99)00581-4