Dynamic latch-up in advanced LIGBT structures at high operating temperatures

M. Vellvehi, X. Jordà, D. Flores, E. Morvan, P. Godignon, J. Rebollo, J. Millán

    Research output: Contribution to journalArticleResearchpeer-review

    2 Citations (Scopus)


    The dynamic latch-up process in conventional and modified lateral insulated gate bipolar transistor (LIGBT) structures is studied in this paper. In a previous study, we have argued that the modified structure shows a superior static latch-up performance at high operating temperatures. The dynamic latch-up has also been measured under resistive load at different operating temperatures. The dependence of the dynamic latch-up current with the gate resistance has also been taken into account. A figure of merit of the dynamic latch-up current normalized to the static latch-up current level as a function of operating temperature shows the excellent electrical behaviour of the proposed modified LIGBT structure at high temperatures when compared with its conventional counterpart.
    Original languageEnglish
    Pages (from-to)304-308
    JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
    Issue number1
    Publication statusPublished - 1 May 2000


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