Double gate MOS-thyristor devices with and without forward bias safe operating area capability: The insulated base MOS-controlled thyristor and the dual MOS-gated thyristor

D. Flores, P. Godignon, X. Jordà, M. Vellvehi, J. Fernández, J. Millán

    Research output: Contribution to journalArticleResearchpeer-review

    Abstract

    MOS-thyristor devices with high voltage and current capabilities may replace conventional thyristors and IGBTs in high power applications. However, the maximum controllable current density (Jmcc), the current saturation capability and the total transient losses have to be improved. This article is addressed to the comparison of the electrical characteristics of MOS-thyristor structures including a Floating Ohmic Contact to provide high packing density and current saturation capability. The operation mode of both structures is analyzed with the aid of numerical simulations and experimental results, obtained from 1200 V devices, are provided to compare their electrical characteristics.
    Original languageEnglish
    Pages (from-to)591-597
    JournalMicroelectronics Journal
    Volume30
    Issue number6
    DOIs
    Publication statusPublished - 1 Jan 1999

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