MOS-thyristor devices with high voltage and current capabilities may replace conventional thyristors and IGBTs in high power applications. However, the maximum controllable current density (Jmcc), the current saturation capability and the total transient losses have to be improved. This article is addressed to the comparison of the electrical characteristics of MOS-thyristor structures including a Floating Ohmic Contact to provide high packing density and current saturation capability. The operation mode of both structures is analyzed with the aid of numerical simulations and experimental results, obtained from 1200 V devices, are provided to compare their electrical characteristics.
|Publication status||Published - 1 Jan 1999|