Domain wall magnetoresistance in BiFeO<inf>3</inf> thin films measured by scanning probe microscopy

N. Domingo, S. Farokhipoor, J. Santiso, B. Noheda, G. Catalan

    Research output: Contribution to journalArticleResearchpeer-review

    12 Citations (Scopus)

    Abstract

    © 2017 IOP Publishing Ltd. We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.
    Original languageEnglish
    Article number334003
    JournalJournal of Physics Condensed Matter
    Volume29
    Issue number33
    DOIs
    Publication statusPublished - 21 Jul 2017

    Keywords

    • BiFeO 3
    • atomic force microscope
    • domain walls
    • magnetoresistance
    • multiferroic
    • scanning probe microscopy

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