TY - JOUR
T1 - Design, fabrication, and characterization of a submicroelectromechanical resonator with monolithically integrated CMOS readout circuit
AU - Verd, Jaume
AU - Abadal, Gabriel
AU - Teva, J.
AU - Gaudó, María Villarroya
AU - Uranga, Arantxa
AU - Borrisé, Xavier
AU - Campabadal, Francesca
AU - Esteve, Jaume
AU - Figueras Costa, Eduardo
AU - Pérez-Murano, Francesc
AU - Davis, Zachary J.
AU - Forsén, Esko
AU - Boisen, Anja
AU - Barniol, Nuria
PY - 2005/6/1
Y1 - 2005/6/1
N2 - In this paper, we report on the main aspects of the design, fabrication, and performance of a microelectromechanical system constituted by a mechanical submicrometer scale resonator (cantilever) and the readout circuitry used for monitoring its oscillation through the detection of the capacitive current. The CMOS circuitry is monolithically integrated with the mechanical resonator by a technology that allows the combination of standard CMOS processes and novel nanofabrication methods. The integrated system constitutes an example of a submicroelectromechanical system to be used as a cantilever-based mass sensor with both a high sensitivity and a high spatial resolution (on the order of 10-18 g and 300 nm, respectively). Experimental results on the electrical characterization of the resonance curve of the cantilever through the integrated CMOS readout circuit are shown. © 2005 IEEE.
AB - In this paper, we report on the main aspects of the design, fabrication, and performance of a microelectromechanical system constituted by a mechanical submicrometer scale resonator (cantilever) and the readout circuitry used for monitoring its oscillation through the detection of the capacitive current. The CMOS circuitry is monolithically integrated with the mechanical resonator by a technology that allows the combination of standard CMOS processes and novel nanofabrication methods. The integrated system constitutes an example of a submicroelectromechanical system to be used as a cantilever-based mass sensor with both a high sensitivity and a high spatial resolution (on the order of 10-18 g and 300 nm, respectively). Experimental results on the electrical characterization of the resonance curve of the cantilever through the integrated CMOS readout circuit are shown. © 2005 IEEE.
KW - CMOS analog integrated circuits
KW - Capacitive transducers
KW - Microelectromechanical devices
KW - Nanotechnology
U2 - https://doi.org/10.1109/JMEMS.2005.844845
DO - https://doi.org/10.1109/JMEMS.2005.844845
M3 - Article
VL - 14
SP - 508
EP - 519
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
SN - 1057-7157
ER -