Abstract
The results of implanting silicon carbide with a 1-MeV proton beam at a dose of 1 × 10-17 cm-2 are presented. Using high-resolution confocal Raman spectroscopy, we analyzed the depth profile of the implantation damage before and after thermal annealing. When it is applied to a high-refractive-index medium, such as SiC, this technique requires careful manipulation to ensure the correct interpretation of results. To this end we discuss a simple ray-tracking model that includes the effects of additional spherical aberration and of the Gaussian intensity profile of the excitation beam. In addition, infrared reflectance measurements show evidence of a well-defined step in the refractive-index profile at the expected implantation depth. © 2004 Optical Society of America.
Original language | English |
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Pages (from-to) | 1275-1280 |
Journal | Applied Optics |
Volume | 43 |
Issue number | 6 |
DOIs | |
Publication status | Published - 20 Feb 2004 |