Depth profiling of high-energy hydrogen-implanted 6H-SiC

Daniel J. Brink, Thibaut Maurice, Servane Blanque, H. Kunert, Jean Camassel, Jordi Pascual

Research output: Contribution to journalArticleResearchpeer-review

5 Citations (Scopus)


The results of implanting silicon carbide with a 1-MeV proton beam at a dose of 1 × 10-17 cm-2 are presented. Using high-resolution confocal Raman spectroscopy, we analyzed the depth profile of the implantation damage before and after thermal annealing. When it is applied to a high-refractive-index medium, such as SiC, this technique requires careful manipulation to ensure the correct interpretation of results. To this end we discuss a simple ray-tracking model that includes the effects of additional spherical aberration and of the Gaussian intensity profile of the excitation beam. In addition, infrared reflectance measurements show evidence of a well-defined step in the refractive-index profile at the expected implantation depth. © 2004 Optical Society of America.
Original languageEnglish
Pages (from-to)1275-1280
JournalApplied Optics
Issue number6
Publication statusPublished - 20 Feb 2004


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