Degradation of polycrystalline HfO<inf>2</inf>-based gate dielectrics under nanoscale electrical stress

V. Iglesias; M. Lanza; K. Zhang; A. Bayerl; M. Porti; M. Nafria; X. Aymerich; G. Benstteter; Z. Y. Shen; G. Bersuker

doi:https://doi.org/10.1063/1.3637633

Degradation of polycrystalline HfO<inf>2</inf>-based gate dielectrics under nanoscale electrical stress

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafria, X. Aymerich, G. Benstteter, Z. Y. Shen, G. Bersuker

Research output: Contribution to journal › Article › Research › peer-review

36 Citations (Scopus)

Abstract

The evolution of the electrical properties of HfO2/SiO 2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks. © 2011 American Institute of Physics.

Original language	English
Article number	103510
Journal	Applied Physics Letters
Volume	99
DOIs	https://doi.org/10.1063/1.3637633
Publication status	Published - 5 Sep 2011

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title = "Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress",

abstract = "The evolution of the electrical properties of HfO2/SiO 2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks. {\textcopyright} 2011 American Institute of Physics.",

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Degradation of polycrystalline HfO<inf>2</inf>-based gate dielectrics under nanoscale electrical stress. / Iglesias, V.; Lanza, M.; Zhang, K.; Bayerl, A.; Porti, M.; Nafria, M.; Aymerich, X.; Benstteter, G.; Shen, Z. Y.; Bersuker, G.

In: Applied Physics Letters, Vol. 99, 103510, 05.09.2011.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

AU - Iglesias, V.

AU - Lanza, M.

AU - Zhang, K.

AU - Bayerl, A.

AU - Porti, M.

AU - Nafria, M.

AU - Aymerich, X.

AU - Benstteter, G.

AU - Shen, Z. Y.

AU - Bersuker, G.

PY - 2011/9/5

Y1 - 2011/9/5

N2 - The evolution of the electrical properties of HfO2/SiO 2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks. © 2011 American Institute of Physics.

AB - The evolution of the electrical properties of HfO2/SiO 2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. Electrical stress produces different degradation kinetics in the grains and GBs, with a much shorter time to breakdown in the latter, indicating that GBs facilitate dielectric breakdown in high-k gate stacks. © 2011 American Institute of Physics.

U2 - https://doi.org/10.1063/1.3637633

DO - https://doi.org/10.1063/1.3637633

M3 - Article

VL - 99

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