Original language | English |
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Pages (from-to) | 1365-1369 |
Journal | Microelectronics and Reliability |
Volume | 45 |
DOIs | |
Publication status | Published - 1 Jan 2005 |
Degradation of high-K La2O3 gate dielectrics using progressive electrical stress
E. Miranda, J. Molina, Y. Kim, H. Iwai
Research output: Contribution to journal › Article › Research
18
Citations
(Scopus)