Degradation of high-K La2O3 gate dielectrics using progressive electrical stress

E. Miranda, J. Molina, Y. Kim, H. Iwai

Research output: Contribution to journal › Article › Research

18 Citations (Scopus)

Original language	English
Pages (from-to)	1365-1369
Journal	Microelectronics and Reliability
Volume	45
DOIs	https://doi.org/10.1016/j.microrel.2005.07.022
Publication status	Published - 1 Jan 2005

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title = "Degradation of high-K La2O3 gate dielectrics using progressive electrical stress",

author = "E. Miranda and J. Molina and Y. Kim and H. Iwai",

year = "2005",

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T1 - Degradation of high-K La2O3 gate dielectrics using progressive electrical stress

AU - Miranda, E.

AU - Molina, J.

AU - Kim, Y.

AU - Iwai, H.

PY - 2005/1/1

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U2 - 10.1016/j.microrel.2005.07.022

DO - 10.1016/j.microrel.2005.07.022

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VL - 45

SP - 1365

EP - 1369

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

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