Degradation dynamics and breakdown of MgO gate oxides

E. Miranda; E. O'Connor; G. Hughes; P. Casey; K. Cherkaoui; S. Monaghan; R. Long; D. O'Connell; P. K. Hurley

doi:10.1016/j.mee.2009.03.009

Degradation dynamics and breakdown of MgO gate oxides

E. Miranda, E. O'Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O'Connell, P. K. Hurley

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

9 Citations (Scopus)

Abstract

The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported. © 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1715-1717
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.009
Publication status	Published - 1 Jul 2009

Keywords

Breakdown
Magnesium oxide
MOS

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10.1016/j.mee.2009.03.009

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keywords = "Breakdown, Magnesium oxide, MOS",

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AU - Miranda, E.

AU - O'Connor, E.

AU - Hughes, G.

AU - Casey, P.

AU - Cherkaoui, K.

AU - Monaghan, S.

AU - Long, R.

AU - O'Connell, D.

AU - Hurley, P. K.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported. © 2009 Elsevier B.V. All rights reserved.

AB - The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive BD in 20-nm thick films is also reported. © 2009 Elsevier B.V. All rights reserved.

KW - Breakdown

KW - Magnesium oxide

KW - MOS

U2 - 10.1016/j.mee.2009.03.009

DO - 10.1016/j.mee.2009.03.009

M3 - Article

SN - 0167-9317

VL - 86

SP - 1715

EP - 1717

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7-9

ER -

Degradation dynamics and breakdown of MgO gate oxides

Abstract

Keywords

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