Degradation and Breakdown of Gate Oxides in VLSI Devices

J. Suñé; I. Placencia; N. Barniol; E. Farrés; X. Aymerich

doi:10.1002/pssa.2211110235

Degradation and Breakdown of Gate Oxides in VLSI Devices

J. Suñé, I. Placencia, N. Barniol, E. Farrés, X. Aymerich

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

41 Citations (Scopus)

Abstract

A model for the degradation and breakdown of thin gate oxide films is presented. During electrical stresses, a small fraction of the energy of the tunnel electrons that is dissipated in the oxide is converted into the creation of electron traps. When a critical density of traps is achieved, a fast runaway process leads the oxide to break down and its insulating properties are irreversively lost. It is demonstrated that the total charge injected to breakdown depends on the applied current in accordance with recently published results. The quasi‐linear log (time‐to‐breakdown) versus log (current density) plot experimentally obtained for VLSI oxides (tox ≈ 100 Å) is correctly predicted. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA

Original language	English
Pages (from-to)	675-685
Journal	physica status solidi (a)
Volume	111
Issue number	2
DOIs	https://doi.org/10.1002/pssa.2211110235
Publication status	Published - 1 Jan 1989

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title = "Degradation and Breakdown of Gate Oxides in VLSI Devices",

abstract = "A model for the degradation and breakdown of thin gate oxide films is presented. During electrical stresses, a small fraction of the energy of the tunnel electrons that is dissipated in the oxide is converted into the creation of electron traps. When a critical density of traps is achieved, a fast runaway process leads the oxide to break down and its insulating properties are irreversively lost. It is demonstrated that the total charge injected to breakdown depends on the applied current in accordance with recently published results. The quasi‐linear log (time‐to‐breakdown) versus log (current density) plot experimentally obtained for VLSI oxides (tox ≈ 100 {\AA}) is correctly predicted. Copyright {\textcopyright} 1989 WILEY‐VCH Verlag GmbH & Co. KGaA",

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AU - Suñé, J.

AU - Placencia, I.

AU - Barniol, N.

AU - Farrés, E.

AU - Aymerich, X.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - A model for the degradation and breakdown of thin gate oxide films is presented. During electrical stresses, a small fraction of the energy of the tunnel electrons that is dissipated in the oxide is converted into the creation of electron traps. When a critical density of traps is achieved, a fast runaway process leads the oxide to break down and its insulating properties are irreversively lost. It is demonstrated that the total charge injected to breakdown depends on the applied current in accordance with recently published results. The quasi‐linear log (time‐to‐breakdown) versus log (current density) plot experimentally obtained for VLSI oxides (tox ≈ 100 Å) is correctly predicted. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA

AB - A model for the degradation and breakdown of thin gate oxide films is presented. During electrical stresses, a small fraction of the energy of the tunnel electrons that is dissipated in the oxide is converted into the creation of electron traps. When a critical density of traps is achieved, a fast runaway process leads the oxide to break down and its insulating properties are irreversively lost. It is demonstrated that the total charge injected to breakdown depends on the applied current in accordance with recently published results. The quasi‐linear log (time‐to‐breakdown) versus log (current density) plot experimentally obtained for VLSI oxides (tox ≈ 100 Å) is correctly predicted. Copyright © 1989 WILEY‐VCH Verlag GmbH & Co. KGaA

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