| Translated title of the contribution | Degradation and breakdown of gate oxides in VLSI decives |
|---|---|
| Original language | Multiple languages |
| Pages (from-to) | 675-685 |
| Journal | Physica status solidi. A, Applied research |
| Volume | 111 |
| Publication status | Published - 1 Jan 1989 |
Degradation and breakdown of gate oxides in VLSI decives
J. Suñé, I. Placencia, N. Barniol, E. Farrés, X. Aymerich
Research output: Contribution to journal › Article › Research
44
Citations
(Scopus)