Degradation and breakdown of gate oxides in VLSI decives

Translated title of the contribution: Degradation and breakdown of gate oxides in VLSI decives

J. Suñé, I. Placencia, N. Barniol, E. Farrés, X. Aymerich

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41 Citations (Scopus)
Translated title of the contributionDegradation and breakdown of gate oxides in VLSI decives
Original languageMultiple languages
Pages (from-to)675-685
JournalPhysica status solidi. A, Applied research
Volume111
Publication statusPublished - 1 Jan 1989

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