Translated title of the contribution | Degradation and breakdown of gate oxides in VLSI decives |
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Original language | Multiple languages |
Pages (from-to) | 675-685 |
Journal | Physica status solidi. A, Applied research |
Volume | 111 |
Publication status | Published - 1 Jan 1989 |
Degradation and breakdown of gate oxides in VLSI decives
J. Suñé, I. Placencia, N. Barniol, E. Farrés, X. Aymerich
Research output: Contribution to journal › Article › Research
44
Citations
(Scopus)