© 2009 by Taylor & Francis Group, LLC. The focus of this chapter is the breakdown (BD) of the thin SiO2films used as gate insulators in metal–oxide–semiconductor (MOS) field-effect transistors (FETs). This includes the nitrided silicon oxides that have replaced pure SiO2for ultrathin gate oxide applications because the incorporation of nitrogen allows a reduction in the gate leakage current. Although the main concepts presented in this chapter might also (at least partially) apply to the BD of the high-K dielectrics required to further proceed with MOS technology downscaling, we will not explicitly deal with these types of dielectrics. In the process of reducing the transistor dimensions, the gate oxide thickness (TOX) has been reduced from hundreds of nanometers to roughly 1 nm. Here, we will deal with oxides thinner than 10 nm, with emphasis on ultrathin oxides with TOX<3 nm. Specification of the thickness range is important because the phenomenology associated with defect generation and BD changes with TOX.
|Title of host publication||Defects in Microelectronic Materials and Devices|
|Number of pages||31|
|Publication status||Published - 1 Jan 2008|