Dedicated random telegraph noise characterization of Ni/HfO<inf>2</inf>-based RRAM devices

M. B. Gonzalez; J. Martin-Martinez; R. Rodriguez; M. C. Acero; M. Nafria; F. Campabadal; X. Aymerich

doi:https://doi.org/10.1016/j.mee.2015.04.046

Dedicated random telegraph noise characterization of Ni/HfO<inf>2</inf>-based RRAM devices

M. B. Gonzalez, J. Martin-Martinez, R. Rodriguez, M. C. Acero, M. Nafria, F. Campabadal, X. Aymerich

Research output: Contribution to journal › Article › Research › peer-review

8 Citations (Scopus)

Abstract

© 2015 Elsevier B.V. All rights reserved. In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN measurements in the time domain. After data acquisition, the advanced Weighted Time Lag (WTL) method is employed to accurately identify the contribution of multiple electrically active defects in multilevel RTN signals. Finally, the internal dynamics of trapping and de-trapping processes through the defects close to the filamentary path and its dependence on voltage and time are analyzed.

Original language	English
Pages (from-to)	59-62
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.046
Publication status	Published - 1 Nov 2015

Keywords

Conductive filament
HfO 2
Ni
Random telegraph noise (RTN)
Resistive random access memory (RRAM)
Variability

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https://doi.org/10.1016/j.mee.2015.04.046

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title = "Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices",

abstract = "{\textcopyright} 2015 Elsevier B.V. All rights reserved. In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN measurements in the time domain. After data acquisition, the advanced Weighted Time Lag (WTL) method is employed to accurately identify the contribution of multiple electrically active defects in multilevel RTN signals. Finally, the internal dynamics of trapping and de-trapping processes through the defects close to the filamentary path and its dependence on voltage and time are analyzed.",

keywords = "Conductive filament, HfO 2, Ni, Random telegraph noise (RTN), Resistive random access memory (RRAM), Variability",

author = "Gonzalez, {M. B.} and J. Martin-Martinez and R. Rodriguez and Acero, {M. C.} and M. Nafria and F. Campabadal and X. Aymerich",

year = "2015",

month = nov,

day = "1",

doi = "https://doi.org/10.1016/j.mee.2015.04.046",

language = "English",

volume = "147",

pages = "59--62",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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TY - JOUR

T1 - Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

AU - Gonzalez, M. B.

AU - Martin-Martinez, J.

AU - Rodriguez, R.

AU - Acero, M. C.

AU - Nafria, M.

AU - Campabadal, F.

AU - Aymerich, X.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - © 2015 Elsevier B.V. All rights reserved. In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN measurements in the time domain. After data acquisition, the advanced Weighted Time Lag (WTL) method is employed to accurately identify the contribution of multiple electrically active defects in multilevel RTN signals. Finally, the internal dynamics of trapping and de-trapping processes through the defects close to the filamentary path and its dependence on voltage and time are analyzed.

AB - © 2015 Elsevier B.V. All rights reserved. In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN measurements in the time domain. After data acquisition, the advanced Weighted Time Lag (WTL) method is employed to accurately identify the contribution of multiple electrically active defects in multilevel RTN signals. Finally, the internal dynamics of trapping and de-trapping processes through the defects close to the filamentary path and its dependence on voltage and time are analyzed.

KW - Conductive filament

KW - HfO 2

KW - Ni

KW - Random telegraph noise (RTN)

KW - Resistive random access memory (RRAM)

KW - Variability

U2 - https://doi.org/10.1016/j.mee.2015.04.046

DO - https://doi.org/10.1016/j.mee.2015.04.046

M3 - Article

VL - 147

SP - 59

EP - 62

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

Dedicated random telegraph noise characterization of Ni/HfO<inf>2</inf>-based RRAM devices

Abstract

Keywords

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