DC broken down MOSFET model for circuit reliability simulation

Research output: Contribution to journalArticleResearchpeer-review

10 Citations (Scopus)

Abstract

A simple model for MOSFETs with broken down gate oxides is presented. With a unique simple equivalent circuit and a reduced number of parameters, the model is able to describe the MOSFET performance of broken down MOSFETs and can be easily introduced in circuit simulators. The breakdown hardness and position along the channel are taken into account by simply varying the model parameters. © IEE 2005.
Original languageEnglish
Pages (from-to)368-370
JournalElectronics Letters
Volume41
DOIs
Publication statusPublished - 17 Mar 2005

Fingerprint

Dive into the research topics of 'DC broken down MOSFET model for circuit reliability simulation'. Together they form a unique fingerprint.

Cite this