DC broken down MOSFET model for circuit reliability simulation

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10 Citations (Scopus)


A simple model for MOSFETs with broken down gate oxides is presented. With a unique simple equivalent circuit and a reduced number of parameters, the model is able to describe the MOSFET performance of broken down MOSFETs and can be easily introduced in circuit simulators. The breakdown hardness and position along the channel are taken into account by simply varying the model parameters. © IEE 2005.
Original languageEnglish
Pages (from-to)368-370
JournalElectronics Letters
Publication statusPublished - 17 Mar 2005


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