Damage reduction in channeled ion implanted 6H-SiC

E. Morvan; N. Mestres; F.J. Campos; J. Pascual; A. Hállen; M. Linnarsson; A.Y. Kutznetsov

Damage reduction in channeled ion implanted 6H-SiC

E. Morvan, N. Mestres, F.J. Campos, J. Pascual, A. Hállen, M. Linnarsson, A.Y. Kutznetsov

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

3 Citations (Scopus)

Abstract

We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.

Original language	English
Pages (from-to)	893-896
Journal	Materials Science Forum
Volume	338
Issue number	3
Publication status	Published - 1 Jan 2000

Cite this

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title = "Damage reduction in channeled ion implanted 6H-SiC",

abstract = "We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.",

author = "E. Morvan and N. Mestres and F.J. Campos and J. Pascual and A. H{\'a}llen and M. Linnarsson and A.Y. Kutznetsov",

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T1 - Damage reduction in channeled ion implanted 6H-SiC

AU - Morvan, E.

AU - Mestres, N.

AU - Campos, F.J.

AU - Pascual, J.

AU - Hállen, A.

AU - Linnarsson, M.

AU - Kutznetsov, A.Y.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.

AB - We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.

M3 - Article

SN - 0255-5476

VL - 338

SP - 893

EP - 896

JO - Materials Science Forum

JF - Materials Science Forum

IS - 3

ER -

Damage reduction in channeled ion implanted 6H-SiC

Abstract

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