We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.
|Journal||Materials Science Forum|
|Publication status||Published - 1 Jan 2000|