Damage reduction in channeled ion implanted 6H-SiC

E. Morvan, N. Mestres, F. J. Campos, J. Pascual, A. Hallén, M. Linnarsson, A. Yu Kuznetsov

Research output: Contribution to journalArticleResearchpeer-review

Abstract

We compare damage effects of `random' (off-axis) and 〈0001〉 aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below approximately 5×1014cm-2, the integral damage is reduced by a factor of approximately 2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.
Original languageEnglish
JournalMaterials Science Forum
Volume338
Publication statusPublished - 1 Jan 2000

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