Current, charge, and capacitance during scanning probe oxidation of silicon. I. Maximum charge density and lateral diffusion

J. A. Dagata, F. Perez-Murano, C. Martin, H. Kuramochi, H. Yokoyama

    Research output: Contribution to journalArticleResearchpeer-review

    79 Citations (Scopus)

    Abstract

    An analysis of the electric current passing through the tip-substrate junction during oxidation of silicon was discussed. Scanning probe microscopy (SPM) was used for the purpose of analysis. It was shown that oxidation is governed by a maximum charge density generated by electronic species within the junction. A uniform charge density implies that oxides contain a fixed defect concentration.
    Original languageEnglish
    Pages (from-to)2386-2392
    JournalJournal of Applied Physics
    Volume96
    Issue number4
    DOIs
    Publication statusPublished - 15 Aug 2004

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