Current, charge, and capacitance during scanning probe oxidation of silicon. II. Electrostatic and meniscus forces acting on cantilever bending

J. A. Dagata, F. Perez-Murano, C. Martin, H. Kuramochi, H. Yokoyama

    Research output: Contribution to journalArticleResearchpeer-review

    32 Citations (Scopus)

    Abstract

    An analysis of the electric current passing through the tip-substrate junction during oxidation of silicon was presented. Scanning probe microscopy (SPM) was used for the purpose of analysis. The analysis identified the electronic and ionic contributions to the total current, especially at the initial stages of the reaction. The roles of space charge and meniscus formation were also evaluated.
    Original languageEnglish
    Pages (from-to)2393-2399
    JournalJournal of Applied Physics
    Volume96
    Issue number4
    DOIs
    Publication statusPublished - 15 Aug 2004

    Fingerprint Dive into the research topics of 'Current, charge, and capacitance during scanning probe oxidation of silicon. II. Electrostatic and meniscus forces acting on cantilever bending'. Together they form a unique fingerprint.

    Cite this