Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al<inf>2</inf>O<inf>3</inf> based devices

M. Lanza; M. Porti; M. Nafria; X. Aymerich; G. Benstetter; E. Lodermeier; H. Ranzinger; G. Jaschke; S. Teichert; L. Wilde; P. Michalowski

doi:https://doi.org/10.1016/j.mee.2009.03.020

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al<inf>2</inf>O<inf>3</inf> based devices

M. Lanza, M. Porti, M. Nafria, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

27 Citations (Scopus)

Abstract

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. © 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1921-1924
Journal	Microelectronic Engineering
Volume	86
DOIs	https://doi.org/10.1016/j.mee.2009.03.020
Publication status	Published - 1 Jul 2009

Keywords

Atomic Force Microscope
Electrical characterization
High-k

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https://doi.org/10.1016/j.mee.2009.03.020

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Lanza, M., Porti, M., Nafria, M., Aymerich, X., Benstetter, G., Lodermeier, E., Ranzinger, H., Jaschke, G., Teichert, S., Wilde, L., & Michalowski, P. (2009). Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al<inf>2</inf>O<inf>3</inf> based devices. Microelectronic Engineering, 86, 1921-1924. https://doi.org/10.1016/j.mee.2009.03.020

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abstract = "In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. {\textcopyright} 2009 Elsevier B.V. All rights reserved.",

keywords = "Atomic Force Microscope, Electrical characterization, High-k",

author = "M. Lanza and M. Porti and M. Nafria and X. Aymerich and G. Benstetter and E. Lodermeier and H. Ranzinger and G. Jaschke and S. Teichert and L. Wilde and P. Michalowski",

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doi = "https://doi.org/10.1016/j.mee.2009.03.020",

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Lanza, M, Porti, M , Nafria, M , Aymerich, X, Benstetter, G, Lodermeier, E, Ranzinger, H, Jaschke, G, Teichert, S, Wilde, L & Michalowski, P 2009, 'Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al<inf>2</inf>O<inf>3</inf> based devices', Microelectronic Engineering, vol. 86, pp. 1921-1924. https://doi.org/10.1016/j.mee.2009.03.020

TY - JOUR

T1 - Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

AU - Lanza, M.

AU - Porti, M.

AU - Nafria, M.

AU - Aymerich, X.

AU - Benstetter, G.

AU - Lodermeier, E.

AU - Ranzinger, H.

AU - Jaschke, G.

AU - Teichert, S.

AU - Wilde, L.

AU - Michalowski, P.

PY - 2009/7/1

Y1 - 2009/7/1

N2 - In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. © 2009 Elsevier B.V. All rights reserved.

AB - In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. © 2009 Elsevier B.V. All rights reserved.

KW - Atomic Force Microscope

KW - Electrical characterization

KW - High-k

U2 - https://doi.org/10.1016/j.mee.2009.03.020

DO - https://doi.org/10.1016/j.mee.2009.03.020

M3 - Article

SN - 0167-9317

VL - 86

SP - 1921

EP - 1924

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al<inf>2</inf>O<inf>3</inf> based devices

Abstract

Keywords

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