Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al<inf>2</inf>O<inf>3</inf> based devices

M. Lanza, M. Porti, M. Nafria, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L. Wilde, P. Michalowski

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24 Citations (Scopus)

Abstract

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures. © 2009 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1921-1924
JournalMicroelectronic Engineering
Volume86
DOIs
Publication statusPublished - 1 Jul 2009

Keywords

  • Atomic Force Microscope
  • Electrical characterization
  • High-k

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