TY - JOUR
T1 - Cryogenic operation of emitter switched thyristor structures
AU - Flores, D.
AU - Jordà, X.
AU - Vellvehí, M.
AU - Rebollo, J.
AU - Millân, J.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - This paper analyses the effect of decreasing the operating temperature on the electrical characteristics of 1100 V epitaxial EST structures. Detailed performed static and transient measurements on ceramic packaged devices at 77 K have shown a significant increase of the maximum controllable current density and a notable reduction of the transient losses and the turn-off time. A reduction of the on-state voltage drop with temperature is observed at current density values higher than 80 A/cm2 (positive coefficient), leading to a more uniform turn-off process. Furthermore, a model is provided to include the temperature effect on the latching current of the main and parasitic thyristor, transconductance and dynamic parameters. © 1999 Elsevier Science Ltd. All rights reserved.
AB - This paper analyses the effect of decreasing the operating temperature on the electrical characteristics of 1100 V epitaxial EST structures. Detailed performed static and transient measurements on ceramic packaged devices at 77 K have shown a significant increase of the maximum controllable current density and a notable reduction of the transient losses and the turn-off time. A reduction of the on-state voltage drop with temperature is observed at current density values higher than 80 A/cm2 (positive coefficient), leading to a more uniform turn-off process. Furthermore, a model is provided to include the temperature effect on the latching current of the main and parasitic thyristor, transconductance and dynamic parameters. © 1999 Elsevier Science Ltd. All rights reserved.
UR - https://www.scopus.com/pages/publications/0033101292
U2 - 10.1016/S0038-1101(98)00313-X
DO - 10.1016/S0038-1101(98)00313-X
M3 - Article
SN - 0038-1101
VL - 43
SP - 633
EP - 640
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 3
ER -