Cryogenic operation of emitter switched thyristor structures

D. Flores, X. Jordà, M. Vellvehí, J. Rebollo, J. Millân

    Research output: Contribution to journalArticleResearchpeer-review

    Abstract

    This paper analyses the effect of decreasing the operating temperature on the electrical characteristics of 1100 V epitaxial EST structures. Detailed performed static and transient measurements on ceramic packaged devices at 77 K have shown a significant increase of the maximum controllable current density and a notable reduction of the transient losses and the turn-off time. A reduction of the on-state voltage drop with temperature is observed at current density values higher than 80 A/cm2 (positive coefficient), leading to a more uniform turn-off process. Furthermore, a model is provided to include the temperature effect on the latching current of the main and parasitic thyristor, transconductance and dynamic parameters. © 1999 Elsevier Science Ltd. All rights reserved.
    Original languageEnglish
    Pages (from-to)633-640
    JournalSolid-State Electronics
    Volume43
    Issue number3
    DOIs
    Publication statusPublished - 1 Jan 1999

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