Cryogenic operation of emitter switched thyristor structures

D. Flores; X. Jordà; M. Vellvehí; J. Rebollo; J. Millân

doi:10.1016/S0038-1101(98)00313-X

Cryogenic operation of emitter switched thyristor structures

D. Flores, X. Jordà, M. Vellvehí, J. Rebollo, J. Millân

Research output: Contribution to journal › Article › Research › peer-review

Abstract

This paper analyses the effect of decreasing the operating temperature on the electrical characteristics of 1100 V epitaxial EST structures. Detailed performed static and transient measurements on ceramic packaged devices at 77 K have shown a significant increase of the maximum controllable current density and a notable reduction of the transient losses and the turn-off time. A reduction of the on-state voltage drop with temperature is observed at current density values higher than 80 A/cm2 (positive coefficient), leading to a more uniform turn-off process. Furthermore, a model is provided to include the temperature effect on the latching current of the main and parasitic thyristor, transconductance and dynamic parameters. © 1999 Elsevier Science Ltd. All rights reserved.

Original language	English
Pages (from-to)	633-640
Journal	Solid-State Electronics
Volume	43
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(98)00313-X
Publication status	Published - 1 Jan 1999

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title = "Cryogenic operation of emitter switched thyristor structures",

abstract = "This paper analyses the effect of decreasing the operating temperature on the electrical characteristics of 1100 V epitaxial EST structures. Detailed performed static and transient measurements on ceramic packaged devices at 77 K have shown a significant increase of the maximum controllable current density and a notable reduction of the transient losses and the turn-off time. A reduction of the on-state voltage drop with temperature is observed at current density values higher than 80 A/cm2 (positive coefficient), leading to a more uniform turn-off process. Furthermore, a model is provided to include the temperature effect on the latching current of the main and parasitic thyristor, transconductance and dynamic parameters. {\textcopyright} 1999 Elsevier Science Ltd. All rights reserved.",

author = "D. Flores and X. Jord{\`a} and M. Vellveh{\'i} and J. Rebollo and J. Mill{\^a}n",

year = "1999",

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doi = "10.1016/S0038-1101(98)00313-X",

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T1 - Cryogenic operation of emitter switched thyristor structures

AU - Flores, D.

AU - Jordà, X.

AU - Vellvehí, M.

AU - Rebollo, J.

AU - Millân, J.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - This paper analyses the effect of decreasing the operating temperature on the electrical characteristics of 1100 V epitaxial EST structures. Detailed performed static and transient measurements on ceramic packaged devices at 77 K have shown a significant increase of the maximum controllable current density and a notable reduction of the transient losses and the turn-off time. A reduction of the on-state voltage drop with temperature is observed at current density values higher than 80 A/cm2 (positive coefficient), leading to a more uniform turn-off process. Furthermore, a model is provided to include the temperature effect on the latching current of the main and parasitic thyristor, transconductance and dynamic parameters. © 1999 Elsevier Science Ltd. All rights reserved.

AB - This paper analyses the effect of decreasing the operating temperature on the electrical characteristics of 1100 V epitaxial EST structures. Detailed performed static and transient measurements on ceramic packaged devices at 77 K have shown a significant increase of the maximum controllable current density and a notable reduction of the transient losses and the turn-off time. A reduction of the on-state voltage drop with temperature is observed at current density values higher than 80 A/cm2 (positive coefficient), leading to a more uniform turn-off process. Furthermore, a model is provided to include the temperature effect on the latching current of the main and parasitic thyristor, transconductance and dynamic parameters. © 1999 Elsevier Science Ltd. All rights reserved.

U2 - 10.1016/S0038-1101(98)00313-X

DO - 10.1016/S0038-1101(98)00313-X

M3 - Article

VL - 43

SP - 633

EP - 640

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -

Cryogenic operation of emitter switched thyristor structures

Abstract

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