Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

E. S. Daniel; X. Cartoixà; W. R. Frensley; D. Z.-Y. Ting; T. C. McGill

doi:10.1109/16.841240

Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

E. S. Daniel, X. Cartoixà, W. R. Frensley, D. Z.-Y. Ting, T. C. McGill

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	1052-1060
Journal	IEEE Trans. Elec. Dev.
Volume	47
Issue number	5
DOIs	https://doi.org/10.1109/16.841240
Publication status	Published - 1 Jan 2000

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10.1109/16.841240

Cite this

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title = "Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode",

author = "Daniel, {E. S.} and X. Cartoix{\`a} and Frensley, {W. R.} and Ting, {D. Z.-Y.} and McGill, {T. C.}",

year = "2000",

month = jan,

day = "1",

doi = "10.1109/16.841240",

language = "English",

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pages = "1052--1060",

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Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode. / Daniel, E. S.; Cartoixà, X.; Frensley, W. R.; Ting, D. Z.-Y.; McGill, T. C.

In: IEEE Trans. Elec. Dev., Vol. 47, No. 5, 01.01.2000, p. 1052-1060.

Research output: Contribution to journal › Article › Research

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AU - Daniel, E. S.

AU - Cartoixà, X.

AU - Frensley, W. R.

AU - Ting, D. Z.-Y.

AU - McGill, T. C.

PY - 2000/1/1

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