Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

E. S. Daniel, X. Cartoixà, W. R. Frensley, D. Z.-Y. Ting, T. C. McGill

    Research output: Contribution to journalArticleResearch

    21 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1052-1060
    JournalIEEE Transactions on Electron Devices
    Issue number5
    Publication statusPublished - 1 Jan 2000

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