Original language | English |
---|---|
Pages (from-to) | 1052-1060 |
Journal | IEEE Transactions on Electron Devices |
Volume | 47 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Jan 2000 |
Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode
E. S. Daniel, X. Cartoixà, W. R. Frensley, D. Z.-Y. Ting, T. C. McGill
Research output: Contribution to journal › Article › Research
21
Citations
(Scopus)