TY - JOUR
T1 - Coulomb (or Strong) Correlation Effects in the Band Structure of Eu2O3
AU - López‐Aguilar, F.
AU - Costa‐Quintana, J.
AU - Muñoz, J. S.
PY - 1982/1/1
Y1 - 1982/1/1
N2 - Two band‐structure calculations of Eu2O3 are performed, one of them in the metallic phase and the other in the semiconducting phase; the difference between the corresponding band Hamiltonians is the occupation potential U (r) that includes the Coulomb correlation effects. In both phases, the 4f occupied bands are mixed with the 2p bands; this fact broadens these 4f bands so that its calculation is possible in this complex crystal lattice T h7. In the semiconducting band structure, the 4f empty bands are localized in the d‐zone energy showing (4f, 5d) hybridization that produces a broadening still greater than for the 4f occupied bands. The semiconducting gap is Γ 1+ – H 1− and its value is 3.7 eV. Copyright © 1982 WILEY‐VCH Verlag GmbH & Co. KGaA
AB - Two band‐structure calculations of Eu2O3 are performed, one of them in the metallic phase and the other in the semiconducting phase; the difference between the corresponding band Hamiltonians is the occupation potential U (r) that includes the Coulomb correlation effects. In both phases, the 4f occupied bands are mixed with the 2p bands; this fact broadens these 4f bands so that its calculation is possible in this complex crystal lattice T h7. In the semiconducting band structure, the 4f empty bands are localized in the d‐zone energy showing (4f, 5d) hybridization that produces a broadening still greater than for the 4f occupied bands. The semiconducting gap is Γ 1+ – H 1− and its value is 3.7 eV. Copyright © 1982 WILEY‐VCH Verlag GmbH & Co. KGaA
U2 - https://doi.org/10.1002/pssb.2221110230
DO - https://doi.org/10.1002/pssb.2221110230
M3 - Article
VL - 111
SP - 659
EP - 669
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
ER -