Contributions of the gate current and channel current variation to the post-breakdown MOSFET performance

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)

Abstract

A new approach to the modelling of the post-breakdown (BD) performance of MOSFETs for circuit simulation is presented, which separately considers the additional post-BD gate current and the variation of the MOSFET channel current. The post-BD gate current is modelled using an improved equivalent circuit whereas the BSIM4 model is used to describe the MOSFET channel current. This approach has allowed to analyse the contributions of both currents on the post-BD ID-VD characteristics. The results show that the gate current increase and the variation of the channel current are determining factors of the MOSFET performance degradation after BD. © 2007 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)259-262
JournalMicroelectronic Engineering
Volume85
DOIs
Publication statusPublished - 1 Feb 2008

Keywords

  • CMOS
  • Circuit reliability
  • Dielectric breakdown
  • Hard breakdown
  • Oxide breakdown
  • Oxide reliability

Fingerprint Dive into the research topics of 'Contributions of the gate current and channel current variation to the post-breakdown MOSFET performance'. Together they form a unique fingerprint.

Cite this