Continuous analytic I-V model for surrounding-gate MOSFETs

D. Jiménez, B. Iníguez, J. Suné, L. F. Marsal, J. Pallarès, J. Roig, D. Flores

Research output: Contribution to journalArticleResearchpeer-review

270 Citations (Scopus)

Abstract

We present a continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs. It is based on the exact solution of the Poisson's equation, and the current continuity equation without the charge-sheet approximation, allowing the inversion charge distribution in the silicon film to be adequately described. It is valid for all the operation regions (linear, saturation, subthreshold) and traces the transition between them without fitting parameters, being ideal for the kernel of SGT MOSFETs compact models. We have demonstrated that the I-V characteristics obtained by this model agree with three-dimensional numerical simulations for all ranges of gate and drain voltages. © 2004 IEEE.
Original languageEnglish
Pages (from-to)571-573
JournalIEEE Electron Device Letters
Volume25
DOIs
Publication statusPublished - 1 Aug 2004

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