We have investigated the defect accumulation and amorphization in14N+implanted 6H-SiC as a function of ion fluence using confocal micro-Raman scattering. Raman spectra are very sensitive to changes in the chemical short-range order and to the formation of Si-Si- and C-C-bonds, which are not present in the unimplanted material. The technique also allowed the determination of the optical absorption coefficient. It increases proportional to the ion dose until the formation of the amorphous layer, and this increase is related to the formation of absorbing centers.
|Journal||Materials Science Forum|
|Publication status||Published - 1 Jan 2000|