Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H-SiC

F. J. Campos, N. Mestres, F. Alsina, J. Pascual, E. Morvan, P. Godignon, J. Millán

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4 Citations (Scopus)

Abstract

High energy (MeV) and low dose aluminum implants were performed in p-type 6H-SiC at room temperature. The material was characterized by means of Rutherford backscattering in channeling configuration and confocal micro-Raman scattering. Information on the damage-induced changes in the absorption coefficient of the implanted layer can be extracted from the depth profiling of the first-order Raman intensity of the undamaged portion of the sample, using a confocal microprobe set-up. Optical modeling indicates the formation of two layers: an outermost, low absorbing, layer with thickness proportional to the energy of the bombarding ions; and a deeper, more damaged, and absorbing layer.
Original languageEnglish
Pages (from-to)357-360
JournalDiamond and Related Materials
Volume8
Issue number2-5
Publication statusPublished - 1 Mar 1999

Keywords

  • 6H-SiC
  • Ion implantation
  • Micro-Raman spectroscopy
  • Rutherford backscattering spectroscopy (RBS)

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