High energy (MeV) and low dose aluminum implants were performed in p-type 6H-SiC at room temperature. The material was characterized by means of Rutherford backscattering in channeling configuration and confocal micro-Raman scattering. Information on the damage-induced changes in the absorption coefficient of the implanted layer can be extracted from the depth profiling of the first-order Raman intensity of the undamaged portion of the sample, using a confocal microprobe set-up. Optical modeling indicates the formation of two layers: an outermost, low absorbing, layer with thickness proportional to the energy of the bombarding ions; and a deeper, more damaged, and absorbing layer.
|Journal||Diamond and Related Materials|
|Publication status||Published - 1 Mar 1999|
- Ion implantation
- Micro-Raman spectroscopy
- Rutherford backscattering spectroscopy (RBS)