Conductivity and charge trapping after electrical stress in amorphous and polycrystalline Al<inf>2</inf>O<inf>3</inf>Based Devices Studied With AFM-Related Techniques

Mario Lanza, Marc Porti, Montserrat Nafra, Xavier Aymerich, Gnther Benstetter, Edgar Lodermeier, Heiko Ranzinger, Gert Jaschke, Steffen Teichert, Lutz Wilde, Pawel Piotr Michalowski

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27 Citations (Scopus)

Abstract

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al 2O3 stacks for flash memories on the annealing temperature (TA). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on TA. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks. © 2006 IEEE.
Original languageEnglish
Article number5409571
Pages (from-to)344-351
JournalIEEE Transactions on Nanotechnology
Volume10
DOIs
Publication statusPublished - 1 Mar 2011

Keywords

  • Al O 2 3
  • atomic force microscopy (AFM)
  • dielectric breakdown
  • electrical characterization
  • high-k

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