Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

H. Castán, H. García, S. Dueñas, L. Bailón, E. Miranda, K. Kukli, M. Kemell, M. Ritala, M. Leskelä

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)

Abstract

© 2015 Elsevier B.V. All rights reserved. Holmium titanium oxide (HoTiO<inf>x</inf>) thin films of variable chemical composition grown by atomic layer deposition are studied in order to assess their suitability as dielectric materials in metal-insulator-metal electronic devices. The correlation between thermal and electrical stabilities as well as the potential usefulness of HoTiO<inf>x</inf> as a resistive switching oxide are also explored. It is shown that the layer thickness and the relative holmium content play important roles in the switching behavior of the devices. Cycled current-voltage measurements showed that the resistive switching is bipolar with a resistance window of up to five orders of magnitude. In addition, it is demonstrated that the post-breakdown current-voltage characteristics in HoTiO<inf>x</inf> are well described by a power-law model in a wide voltage and current range which extends from the soft to the hard breakdown regimes.
Original languageEnglish
Pages (from-to)55-59
JournalThin Solid Films
Volume591
DOIs
Publication statusPublished - 1 Jan 2015

Keywords

  • Holmium titanium oxide
  • Oxide breakdown
  • Resistive switching

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