Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	1513-1516
Journal	Microelectronics and Reliability
Volume	42
Publication status	Published - 1 Jan 2002

Cite this

@article{5d1c464b1be349e388a2c1b44e1fabdd,

title = "Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures",

author = "X. Blasco and M. Nafr{\'i}a and X. Aymerich",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "42",

pages = "1513--1516",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

}