Original language | English |
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Pages (from-to) | 1513-1516 |
Journal | Microelectronics and Reliability |
Volume | 42 |
Publication status | Published - 1 Jan 2002 |
Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures
X. Blasco, M. Nafría, X. Aymerich
Research output: Contribution to journal › Article › Research