Conducting interfaces between amorphous oxide layers and SrTiO<inf>3</inf>(110) and SrTiO<inf>3</inf>(111)

Mateusz Scigaj, Jaume Gázquez, María Varela, Josep Fontcuberta, Gervasi Herranz, Florencio Sánchez

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9 Citations (Scopus)

Abstract

© 2015 Elsevier B.V. All rights reserved. Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO does not depend on the substrate orientation, i.e. tc (a-LAO/(110)STO) ≈ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: tc(a-LAO/(110)STO) < tc(a-YSZ/(110)STO) < tc(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientation-dependent enthalpy vacancy formation and diffusion. Scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces.
Original languageEnglish
Pages (from-to)68-72
JournalSolid State Ionics
Volume281
DOIs
Publication statusPublished - 15 Nov 2015

Keywords

  • LaAlO /SrTiO 3 3
  • Oxide interfaces
  • Oxygen vacancies

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