Composition dependence of the phonon strain shift coefficients of SiGe alloys revisited

J. S. Reparaz; A. Bernardi; A. R. Goñi; M. I. Alonso; M. Garriga

doi:10.1063/1.2884526

Composition dependence of the phonon strain shift coefficients of SiGe alloys revisited

J. S. Reparaz, A. Bernardi, A. R. Goñi, M. I. Alonso, M. Garriga

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

By combining Raman scattering from the cleaved edge and under hydrostatic pressure, we have accurately determined the tetragonal phonon deformation potentials of strained Si1-x Gex alloys in the entire compositional range for the Ge-like, Si-like, and mixed Si-Ge optical modes. A known biaxial strain is induced on thin alloy layers by pseudomorphic epitaxial growth on silicon and subsequent capping. We also determine the strain shift coefficient of the three modes, which are essentially independent of Ge content between 0.4 and 1. This is key information for an effective use of Raman scattering as strain-characterization tool in SiGe nanostructures. © 2008 American Institute of Physics.

Original language	English
Article number	081909
Journal	Applied Physics Letters
Volume	92
Issue number	8
DOIs	https://doi.org/10.1063/1.2884526
Publication status	Published - 6 Mar 2008

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@article{d8c746e08dde48c9bc75073ce97cc044,

title = "Composition dependence of the phonon strain shift coefficients of SiGe alloys revisited",

abstract = "By combining Raman scattering from the cleaved edge and under hydrostatic pressure, we have accurately determined the tetragonal phonon deformation potentials of strained Si1-x Gex alloys in the entire compositional range for the Ge-like, Si-like, and mixed Si-Ge optical modes. A known biaxial strain is induced on thin alloy layers by pseudomorphic epitaxial growth on silicon and subsequent capping. We also determine the strain shift coefficient of the three modes, which are essentially independent of Ge content between 0.4 and 1. This is key information for an effective use of Raman scattering as strain-characterization tool in SiGe nanostructures. {\textcopyright} 2008 American Institute of Physics.",

author = "Reparaz, {J. S.} and A. Bernardi and Go{\~n}i, {A. R.} and Alonso, {M. I.} and M. Garriga",

year = "2008",

month = mar,

day = "6",

doi = "10.1063/1.2884526",

language = "English",

volume = "92",

number = "8",

}

TY - JOUR

T1 - Composition dependence of the phonon strain shift coefficients of SiGe alloys revisited

AU - Reparaz, J. S.

AU - Bernardi, A.

AU - Goñi, A. R.

AU - Alonso, M. I.

AU - Garriga, M.

PY - 2008/3/6

Y1 - 2008/3/6

N2 - By combining Raman scattering from the cleaved edge and under hydrostatic pressure, we have accurately determined the tetragonal phonon deformation potentials of strained Si1-x Gex alloys in the entire compositional range for the Ge-like, Si-like, and mixed Si-Ge optical modes. A known biaxial strain is induced on thin alloy layers by pseudomorphic epitaxial growth on silicon and subsequent capping. We also determine the strain shift coefficient of the three modes, which are essentially independent of Ge content between 0.4 and 1. This is key information for an effective use of Raman scattering as strain-characterization tool in SiGe nanostructures. © 2008 American Institute of Physics.

AB - By combining Raman scattering from the cleaved edge and under hydrostatic pressure, we have accurately determined the tetragonal phonon deformation potentials of strained Si1-x Gex alloys in the entire compositional range for the Ge-like, Si-like, and mixed Si-Ge optical modes. A known biaxial strain is induced on thin alloy layers by pseudomorphic epitaxial growth on silicon and subsequent capping. We also determine the strain shift coefficient of the three modes, which are essentially independent of Ge content between 0.4 and 1. This is key information for an effective use of Raman scattering as strain-characterization tool in SiGe nanostructures. © 2008 American Institute of Physics.

U2 - 10.1063/1.2884526

DO - 10.1063/1.2884526

M3 - Article

VL - 92

IS - 8

M1 - 081909

ER -